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Advanced Schottky Barrier Diodes
ASD501V
Surface mount small signal type
Extermely thin package Low stored charge Majority carrier conduction
R0.3 (0.012) Typ.
Formosa MS
0.087 (2.2) 0.071 (1.8) 0.012(0.3) Typ.
0.055 (1.4) 0.039 (1.0)
0.043 (1.1) 0.028 (0.7)
Mechanical data
Case : Molded plastic, 0805 Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight : 0.000159 ounce, 0.0045 gram
0805
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Repetitive peak reverse voltage Continuous reverse voltage Mean rectifying current Forward surge current Capacitance between terminals Storage temperature Operating temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) f=1MHz and applied 10VDC reverse voltage CONDITIONS Symbol VRM VR IO IFSM CT TJ TSTG -40 -40 20 +125 +125 MIN. TYP. MAX. 45 40 100 1000 UNIT V V mA mA pF
o o
C C
ELECTRICAL CHARACTERISTICS (AT TA=25oC unless otherwise noted)
PARAMETER Forward voltage Reverse current IF = 100 mA DC VR = 10 V DC CONDITIONS Symbol VF IR MIN. TYP. MAX. 0.55 30 UNIT V uA
RATING AND CHARACTERISTIC CURVES (ASD501V)
1000
REVERSE CURRENT : (A)
10m
125 C
O
FORWARD CURRENT : (mA)
1m
75 C
O
100
100
10
25 C
O
5C
12
75
O
C
O
C
10
O
25
O
1
25
C
1 0
0.1
0.2
0.3
0.4
0.5
0.6
0.1 0
10
20
40
FORWARD VOLTAGE : (V)
REVERSE VOLTAGE : (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
100
Io CURRENT (%)
80 60 40 20 0 0
CAPACITANCE BETWEEN TERMINALS : (pF)
10
25
50
75
100
1 0
5
101
52
02
53
03
5
AMBIENT TEMPERATURE : Ta
REVERSE VOLTAGE : V
Fig. 4 Derating curve (mounting on glass epoxy PCBs)
Fig. 3 Capacitance between terminals characteristics

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